A hybrid finite element/finite difference time domain electromagnetic approach to the analysis of high-frequency FET devices
✍ Scribed by A. Monorchio; A. Cidronali; G. Manara; G. Pelosi
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 273 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0894-3370
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✦ Synopsis
A comprehensive simulation procedure is presented for describing the behaviour of high-frequency "eld e!ect transistors (FETs). It combines a circuit model of the intrinsic part of the device with a hybrid "nite elements/"nite di!erences (FE/FD) technique directly implemented in time domain (TD). This latter method allows us to e$ciently reconstruct the actual electromagnetic "eld distribution in the di!erent regions of the FET. Indeed, FD are suitable to describe non-linear e!ects in the active part of the device, while "nite elements e$ciently account for material inhomogeneities and complex geometrical shapes. The resulting simulation model includes both electromagnetic wave propagation and charge transport phenomena.