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Frequency dependent conductivity of aluminium nitride films prepared by ion beam-assisted deposition

✍ Scribed by K. Lal; A.K. Meikap; S.K. Chattopadhyay; S.K. Chatterjee; P. Ghosh; M. Ghosh; K. Baba; R. Hatada

Book ID
108388684
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
165 KB
Volume
434
Category
Article
ISSN
0040-6090

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Effect of beam voltage on the properties
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✍ J. H. Edgar; C. A. Carosella; C. R. Eddy; D. T. Smith πŸ“‚ Article πŸ“… 1996 πŸ› Springer US 🌐 English βš– 709 KB

The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (1 1 1), Si (1 00) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disord