๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Free volume effects in chemically amplified DUV positive resists

โœ Scribed by L. Pain; C. Le Cornec; C. Rosilio; P.J. Paniez


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
348 KB
Volume
30
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Acid and base diffusion in chemically am
โœ T. Itani; H. Yoshino; S. Hashimoto; M. Yamana; N. Samoto; K. Kasama ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 274 KB

In order to clarify the photogenerated acid diffusion in resist film, the diffusion behavior of acid, as well as the role of additional base component was investigated in tert-butoxycarbonyl (t-BOC) protected type chemically amplified positive deep ultraviolet (DUV) resists. The resists consisted of

Resist pattern peeling assessment in DUV
โœ Sohan Singh Mehta; Sun Hai Qin; Moitreyee Mukherjee-Roy; Navab Singh; Rakesh Kum ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 261 KB

As device size shrinks resist line peeling becomes more challenging. In this paper we studied the resist pattern peeling based on resist processing parameters and type of bottom antireflective coating (BARC), for patterning trench structures with different duty ratios, in copper and low k dual damas