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Free-running ruby laser annealing of boron implanted silicon

✍ Scribed by E. Cojocaru; N. Comaniciu; L. N. Mihailescu; L. Nanu; L. C. Nistor; V. Teodorescu


Publisher
Springer
Year
1981
Tongue
English
Weight
620 KB
Volume
26
Category
Article
ISSN
1432-0630

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This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured