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Annealing of boron-implanted silicon using a CW CO2 Laser

✍ Scribed by Tsien, P. H. ;Tsou, S. C. ;Takai, M. ;Röschenthaler, D. ;Ramin, M. ;Ryssel, H. ;Ruge, I. ;Wittmaack, K.


Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
609 KB
Volume
63
Category
Article
ISSN
0031-8965

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Laser annealing of plasma implanted boro
✍ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured