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Free Growth of 4H-SiC by Sublimation Method

✍ Scribed by Dedulle, Jean Marc; Anikin, Mikhail; Pons, Michel; Blanquet, Elisabeth; Pisch, Alexander; Madar, Roland; Bernard, Claude


Book ID
121081481
Publisher
Trans Tech Publications, Ltd.
Year
2004
Tongue
English
Weight
552 KB
Volume
457-460
Category
Article
ISSN
1662-9752

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Large SiC crystals can be grown by a sublimation process. For electronic application the control of the growth of a definite polytype is important. We have shown that sublimation growth on the Si[0001] side, under given conditions, always crystallizes the 6H polytype regardless of the polytype of th