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Formation of thin films of monocrystalline CoSi2 on (100) Si

โœ Scribed by K. Maex; G. Brijs; J. Vanhellemont; W. Vandervorst

Book ID
113281618
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
582 KB
Volume
59-60
Category
Article
ISSN
0168-583X

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The reaction of Co with epitaxial Si C (001) films is investigated with regard to dependence on annealing temperature 12y y and C concentration y. Resistance measurements and RBS analysis reveal a small increase in the disilicide formation temperature. The electrical properties are very similar for