✦ LIBER ✦

Formation of silicon carbide layers by the ion beam technique and their electrical properties

✍ Scribed by Tadamasa Kimura; Shigemi Yugo; Song Bao Zhou; Yoshio Adachi

Book ID: 113280172
Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 414 KB
Volume: 39
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(89)90779-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Formation of cubic silicon carbide layer

Formation of cubic silicon carbide layers on silicon under the action of continuous and pulsed carbon ion beams

✍ R. M. Bayazitov; I. B. Khaibullin; R. I. Batalov; R. M. Nurutdinov 📂 Article 📅 2003 🏛 Springer 🌐 English ⚖ 299 KB

Electrical and optical properties of amo

Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique

✍ Anderson, D. A.; Spear, W. E. 📂 Article 📅 1977 🏛 Taylor and Francis Group 🌐 English ⚖ 823 KB

Structure and annealing properties of si

Structure and annealing properties of silicon carbide thin layers formed by implantation of carbon ions in silicon

✍ Tadamasa Kimura; Shigeru Kagiyama; Shigemi Yugo 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 683 KB

Electrical Properties of TiNx Films on p

Electrical Properties of TiNx Films on p-silicon Substrates Obtained by Reactive Ion Beam Assisted Deposition Technique

✍ A. M. Narsale; Yousuf Pyar Ali; D. C. Kothari; L. Guzman; A. Miotello 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 83 KB

Structure and optical properties of sili

Structure and optical properties of silicon layers with GaSb nanocrystals created by ion-beam synthesis

✍ Komarov, F. ;Vlasukova, L. ;Milchanin, O. ;Mudryi, A. ;Dunets, B. ;Wesch, W. ;We 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 556 KB

## Abstract We have studied the ion‐beam synthesis of GaSb nanocrystals in Si by high‐fluence implantation of Sb and Ga ions followed by thermal annealing. RBS, TEM/TED, RS, and photoluminescence (PL) were employed to characterize the implanted layers. It was found that the nanocrystals size increa

Formation of silicon carbide cluster cat

Formation of silicon carbide cluster cations and their reaction with acetylene. Unusual behavior of the disilicon carbide ions

✍ Denise C. Parent 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 1012 KB