✦ LIBER ✦

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

✍ Scribed by Jian Cui; Jian Hui Lin; Yue Qin Wu; Liang Yong Fan; Zhenyang Zhong; Xin Ju Yang; Zui Min Jiang

Book ID: 107470911
Publisher: Springer-Verlag
Year: 2010
Tongue: English
Weight: 747 KB
Volume: 6
Category: Article
ISSN: 1931-7573
DOI: 10.1007/s11671-010-9811-y

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of alloy buffer and capping la

Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation

✍ Dasika, V. D.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.; Goldman, R. S. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 463 KB

Influence of the Si cap layer on the SiG

Influence of the Si cap layer on the SiGe islands morphology

✍ M. Żak; J-Y. Laval; P.A. Dłużewski; S. Kret; V. Yam; D. Bouchier; F. Fossard 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 923 KB

Growth features at competing nucleation

Growth features at competing nucleation of quantum dots and nanopits in Si-Ge-C ternary system

✍ K. M. Gambaryan, V. M. Aroutiounian, A. K. Simonyan, L. G. Movsesyan 📂 Article 📅 2012 🏛 Allerton Press, Inc. 🌐 English ⚖ 368 KB

Theory of strain states in InAs quantum

Theory of strain states in InAs quantum dots and dependence on their capping layers

✍ Nabetani, Y.; Matsumoto, T.; Sasikala, G.; Suemune, I. 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 833 KB

Influences of template layer thickness o

Influences of template layer thickness on strain fields and transition energies in self-assembled SiGe∕Si quantum dots

✍ Kuo, M. K.; Lin, T. R.; Hong, K. B. 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 486 KB

Influence of Capping Conditions on CdSe/

Influence of Capping Conditions on CdSe/ZnSe Quantum Dot Formation

✍ T. Passow; K. Leonardi; H. Heinke; D. Hommel; J. Seufert; G. Bacher; A. Forchel 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 86 KB

CdSe/ZnSe quantum structures grown on GaAs(001) by molecular beam epitaxy (MBE) were investigated by temperature dependent, time-resolved photoluminescence spectroscopy. A strong influence of the conditions during cap layer growth on the optical properties was found. Using conventional MBE excitons