We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600-800 mm thick silicon bulk, contacted on th
โฆ LIBER โฆ
Formation of high-resistance supported lipid bilayer on the surface of a silicon substrate with microelectrodes
โ Scribed by Tsuneo Urisu; Md. Mashiur Rahman; Hidetaka Uno; Ryugo Tero; Yoichi Nonogaki
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 545 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1549-9634
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