𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Formation of Ge self-assembled quantum dots on a SixGe1−x buffer layer

✍ Scribed by Hyungjun Kim; Chansun Shin; Joonyeon Chang

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
303 KB
Volume
252
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Self-assembled InAs quantum dots on anti
Self-assembled InAs quantum dots on anti-phase domains of GaAs on Ge substrates
✍ W. Tantiweerasophon; S. Thainoi; P. Changmuang; S. Kanjanachuchai; S. Rattanatha 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 664 KB

The authors report the formation of self-assembled InAs quantum dots (QDs) grown on GaAs/Ge substrates having anti-phase domains (APDs) by molecular beam epitaxy. The AFM images of InAs QDs grown on different GaAs thicknesses are shown and compared. The samples with InAs coverage of 1.80 MLs with Ga

Photoluminescence studies of self-assemb
Photoluminescence studies of self-assembled InAs quantum dots formed on InGaAs/GaAs quantum well
✍ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum

Optical properties of vertically aligned
Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates
✍ P.P. González-Borrero; D.I. Lubyshev; E. Marega Jr; E. Petitprez; P. Basmaji 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 76 KB

In this work, we present substrate orientation effects on optical properties in vertically stacked In 0.5 Ga 0.5 As layers grown by molecular beam epitaxy on (311)A/B and reference (100) GaAs substrates. Samples were grown for different GaAs spacer thicknesses. The spacer thickness variation shows t