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Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy

✍ Scribed by K. Umeno; Y. Furukawa; N. Urakami; R. Noma; S. Mitsuyoshi; A. Wakahara; H. Yonezu

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
658 KB
Volume
42
Category
Article
ISSN
1386-9477

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Effects of growth conditions on the size
Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy
✍ X.M. Lu; Y. Izumi; M. Koyama; Y. Nakata; S. Adachi; S. Muto πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 908 KB

The effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs by molecular beam epitaxy (MBE) were studied with an emphasis on their use for single QD spectroscopy. The effects of substrate temperature and growth rate on the density and siz