Fabrication of ZnSe Diodes with CdSe Quantum-Dot Layers by Molecular Beam Epitaxy
โ Scribed by N. Matsumura; H. Endo; J. Saraie
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 63 KB
- Volume
- 229
- Category
- Article
- ISSN
- 0370-1972
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๐ SIMILAR VOLUMES
MgSeTe/ZnTe superlattices were proposed as carrier-confinement layers for high-performance yellow-green light emitting diodes (LEDs) on ZnTe substrates for the first time. ZnCdTe/ZnTe LEDs consisting of ZnCdTe quantum well active and ZnTe cladding layers were fabricated by molecular beam epitaxy inc
H 2 O vapor-activated ZnO layers have been grown on the a-face of sapphire substrates. The grown ZnO layers revealed a crystalline orientation of c-face ZnO k a-face sapphire. For the II/VI flux ratio of 14, the ZnO layers showed a bandedge luminescence with the emission energy of 3.376 and 3.304 eV