Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

✍ Scribed by Tsatsul'nikov, A F; Krestnikov, I L; Lundin, W V; Sakharov, A V; Kartashova, A P; Usikov, A S; Alferov, Zh I; Ledentsov, N N; Strittmatter, A; Hoffmann, A; Bimberg, D; Soshnikov, I P; Litvinov, D; Rosenauer, A; Gerthsen, D; Plaut, A

• Book ID: 120232675
• Publisher: Institute of Physics
• Year: 2000
• Tongue: English
• Weight: 110 KB
• Volume: 15
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/15/7/318