𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Field dependent transformation of electron traps in GaN p–n diodes grown by metal–organic chemical vapour deposition

✍ Scribed by M. Asghar; P. Muret; B. Beaumont; P. Gibart

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
101 KB
Volume
113
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Deep level transient spectroscopy signat
Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates
✍ E. PŁaczek-Popko; J. Trzmiel; E. Zielony; S. Grzanka; R. Czernecki; T. Suski 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 351 KB

In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequen

Luminescence properties of hole traps in
Luminescence properties of hole traps in homojunction gallium nitride diodes grown by metal organic vapour phase epitaxy
✍ M. Asghar; P. Muret; I. Hussain; B. Beaumont; P. Gibart; M. Shahid 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 188 KB

A detailed investigation on p-n junction diodes of GaN using deep level transient Fourier spectroscopy (DLTFS) has been carried out. The typical deep level spectra on the various diodes on the same wafer demonstrate three electron levels labelled as E1, E2 and E3 and a hole trap H1 together with a b