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Formation of deep p–n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment

✍ Scribed by A.G. Ulyashin; Y.A. Bumay; R. Job; W.R. Fahrner

Publisher
Springer
Year
1998
Tongue
English
Weight
210 KB
Volume
66
Category
Article
ISSN
1432-0630

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## Abstract The combination of Ge pre‐amorphization implantation, low‐energy boron implantation, and non‐melt laser annealing is a promising method for forming ultrashallow p^+^/n junctions in silicon. In this study, shallow p^+^/n junctions were formed by non‐melt annealing implanted samples using