Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

✍ Scribed by Yoshifumi Yamashita; Yoshifumi Sakamoto; Yoichi Kamiura; Takeshi Ishiyama

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 153 KB
• Volume: 401-402
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2007.08.150