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Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties

✍ Scribed by A.V. Zotov; F. Wittmann; J. Lechner; S.V. Ryzhkov; V.G. Lifshits; I. Eisele

No coin nor oath required. For personal study only.

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