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Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

✍ Scribed by He, Guowei; Srivastava, N.; Feenstra, R. M.

Book ID
121594850
Publisher
Springer US
Year
2013
Tongue
English
Weight
516 KB
Volume
43
Category
Article
ISSN
0361-5235

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## Abstract Growing device‐quality 3C‐SiC monocrystalline material is still an issue despite two decades of work dedicated to the subject. Using silicon as the substrate generates too many defects in the layers, owing to lattice mismatch, while it is very difficult to control the initial nucleation