A characterization of the graphitic overlayer that forms on 4H-SiCΓ°0 0 0 1Γ substrates heated for ten minutes to temperatures T > 1350 Β°C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increas
β¦ LIBER β¦
Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC
β Scribed by M. L. Bolen; T. Shen; J. J. Gu; R. Colby; E. A. Stach; P. D. Ye; M. A. Capano
- Book ID
- 107457046
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 593 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0361-5235
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