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Formation and stability of lanthanum oxide thin films deposited from β-diketonate precursor

✍ Scribed by Minna Nieminen; Matti Putkonen; Lauri Niinistö


Book ID
108417418
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
326 KB
Volume
174
Category
Article
ISSN
0169-4332

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Yttrium oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 200±425 C using Y(thd) 3 , Y(thd) 3 (bipyridyl), or Y(thd) 3 (1,10-phenanthroline) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) as an yttrium precursor, and ozone as an oxygen source. All yttrium precursors were analyzed