๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Formation and electronic structure of germanium nanocrystals formed by ion beam synthesis

โœ Scribed by C.J. Glover; M.C. Ridgway; D.J. Llewellyn; P. Kluth; B. Johanessen

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
195 KB
Volume
238
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Effects of ion irradiation on metallic n
Effects of ion irradiation on metallic nanocrystals formed by ion beam synthesis in SiO2
โœ Patrick Kluth; Mark C. Ridgway ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 270 KB

Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were irradiated with 2.3 MeV Sn ions at ร€180 ยฐC. The NCs were investigated using cross-section transmission electron microscopy (TEM) as a function of irradiation dose. We observe nucleation of new nanocrystals as a c

Surface structure and apatite-forming ab
Surface structure and apatite-forming ability of polyethylene substrates irradiated by oxygen cluster ion beams
โœ M. Kawashita; S. Itoh; R. Araki; K. Miyamoto; G. H. Takaoka ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 653 KB

## Abstract Polyethylene (PE) substrates were irradiated at a dose of 1 ร— 10^15^ ions/cm^2^ by the simultaneous use of oxygen (O~2~) cluster and monomer ion beams. The acceleration voltage for the ion beams was varied from 3 to 9 kV. Unirradiated and irradiated PE substrates were soaked for 7 days

A nuclear reaction analysis and optical
A nuclear reaction analysis and optical microscopy study on controlled growth of large SiC nanocrystals on Si formed by low-energy ion implantation and electron beam annealing
โœ A. Markwitz; F. Lucas; J. Rusterucci; J. Kennedy; W.J. Trompetter; M. Rudolphi; ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 263 KB

Ion implantation of 20 keV 12 C + ions into (1 0 0), p-type silicon with ion fluence of 8 โ€ข 10 16 at. cm ร€2 followed by an electron beam annealing under high vacuum conditions has been performed to investigate the formation of crystalline nano-scale SiC features on the silicon surface. Depending on