Formation and electrical characterization of buried Si(111)-Sb and Si(100)-Sb surface phases
โ Scribed by A.V. Zotov; V.G. Lifshits; Z.Z. Ditina; P.A. Kalinin
- Book ID
- 118364942
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 831 KB
- Volume
- 273
- Category
- Article
- ISSN
- 0039-6028
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Using electron energy loss spectroscopy, Raman spectroscopy, and conductance measurements in the temperature range 20-500 K we have investigated doping of two-dimensional Mg silicide using the Sb surface phase. The doping process was performed in two steps including formation of the Sb surface phase
ลฝ . ลฝ . The changes of atomic structure and the coverage of binary metals Bi,Sb at the Si 111 surface induced by thermal ลฝ . ลฝ . annealing have been studied by means of low energy electron diffraction LEED , Auger electron spectroscopy AES , and ลฝ . Rutherford backscattering spectrometry RBS techniq