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Formation and decay of SiC2 radicals on the 193 nm photolysis of phenylsilane

✍ Scribed by Haruki Ishikawa; Okitsugu Kajimoto

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 270 KB
Volume: 204
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(93)89205-v

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✦ Synopsis

Tbe Sic, radical was found to be formed easily by the I93 nm photolysis of phenylsilane, both in the cell and molecular beam conditions. The reactivity of the radical in the ground state was quite low. Even in the electronically excited A state, it is inert towards saturated hydrocarbons. The rate of quenching by an unsaturated hydrocarbon, CZH,, is found to be 9.6 X lo-" cm3 molecule-' s-l.

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