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Focussed ion beam induced damage in silicon studied by scanning capacitance microscopy

✍ Scribed by Brezna, W; Wanzenb ck, H; Lugstein, A; Bertagnolli, E; Gornik, E; Smoliner, J


Book ID
120549851
Publisher
Institute of Physics
Year
2003
Tongue
English
Weight
165 KB
Volume
18
Category
Article
ISSN
0268-1242

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Reactive ion etching and reactive ion beam etching are common anisotropic etch processes in silicon microdevice fabrication. Unfortunately, they are also known to create electrically active defects in the bulk material. It is possible to detect these active defects with the electron-beam-induced cur