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Focused-ion beam modification of waveguide photonic devices

✍ Scribed by B.D. Patterson; C. Musil; H. Siegwart; A. Vonlanthen


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
698 KB
Volume
27
Category
Article
ISSN
0167-9317

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Selective Ga + ion implantation and miring by focused ion beam exposure and subsequent wet chemical etching is used to fabricate micro/nanomechanical elements in Si. Freestanding elements with a ~ 30 nm membrane thickness are made by controlled selective underetching between unexposed and exposed ar