Silicon micro/nanomechanical device fabrication based on focused ion beam surface modification and KOH etching
✍ Scribed by J. Brugger; G. Beljakovic; M. Despont; N.F. de Rooij; P. Vettiger
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 286 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Selective Ga + ion implantation and miring by focused ion beam exposure and subsequent wet chemical etching is used to fabricate micro/nanomechanical elements in Si. Freestanding elements with a ~ 30 nm membrane thickness are made by controlled selective underetching between unexposed and exposed areas. Ultrahigh-frequency cantilever beams have been made with resonances in the tens of MHz range. Using a U-shaped beam cross section, mechanical stiffness could be increased 100-fold, which in turn increased the beam resonance frequency to several hundreds of MHz. The direct-write patterning/milling technique was used to fabricate various arbitrary shapes with vertical sidewalls such as submicrometer-sized containers, cups, and other nanomechanical devices.