Flicker noise in degenerately doped Si single crystals near the metal-insulator transition
✍ Scribed by A K Raychaudhuri; Arindam Ghosh; Swastik Kar
- Book ID
- 107586729
- Publisher
- Springer-Verlag
- Year
- 2002
- Tongue
- English
- Weight
- 211 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0304-4289
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📜 SIMILAR VOLUMES
## Abstract Contrary to some recent observations of a gradual increase of 1/__f__ ‐noise with decreasing carrier density in a 2DEG in Si and a 2DHG in GaAs, we have observed a non‐monotonic variation of noise power in a 2DEG in Si. We discuss the role of the following effects in the noise near the
## Abstract We show for __n__ ‐type semiconductors, using Ge:As and 4__H__ ‐SiC:N as examples, that the spin density measured by electron spin resonance (ESR) falls sharply near the insulator–metal (IM) transition. Two reasons might be responsible for this phenomenon: potential fluctuations with co