✦ LIBER ✦

Flexible resistive switching memory devices composed of solution-processed GeO2:S films

✍ Scribed by Chung, Isaac; Cho, Kyoungah; Yun, Junggwon; Kim, Sangsig

Book ID: 122513365
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 585 KB
Volume: 97
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2012.05.032

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Resistive switching characteristics of t

Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

✍ Hongjun Wang; Changwei Zou; Lin Zhou; Canxin Tian; Dejun Fu 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 359 KB

Resistive switching properties of TiO2 f

Resistive switching properties of TiO2 film for flexible non-volatile memory applications

✍ Lin, Chun-Chieh; Liao, Jhih-Wei; Li, Wang-Ying 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 975 KB

Resistive switching characteristics of Z

Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices

✍ Lee, Seunghyup; Kim, Heejin; Yun, Dong-Jin; Rhee, Shi-Woo; Yong, Kijung 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 527 KB

Improved Resistive Switching Properties

Improved Resistive Switching Properties of Solution-Processed TiO x Film by Incorporating Atomic Layer Deposited TiO 2 layer

✍ Kim, Insung; Jung, Seungjae; Shin, Jungho; Biju, Kuyyadi P.; Seo, Kyungah; Siddi 📂 Article 📅 2011 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 630 KB