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Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon

โœ Scribed by T Gebel; M Voelskow; W Skorupa; G Mannino; V Privitera; F Priolo; E Napolitani; A Carnera


Book ID
114165185
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
181 KB
Volume
186
Category
Article
ISSN
0168-583X

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Laser annealing of plasma implanted boro
โœ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured