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First steps of the build-up of the Si3N4/Ga0.47In0.53 As interface by UV-induced chemical vapor deposition

✍ Scribed by J.M. Moison; F. Houzay; F. Barthe; C.A. Sébenne

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

First steps of the build-up of the Si3N4

✍ J.M. Moison; F. Houzay; F. Barthe; C.A. Sébenne 📂 Article 📅 1991 🏛 Elsevier Science ⚖ 79 KB

Heteroepitaxy of In0.53Ga0.47As on GaAs

✍ Aiguang Ren; Xiaomin Ren; Qi Wang; Deping Xiong; Hui Huang; Yongqing Huang 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 196 KB

Influence of the surface treatments by m

✍ J.M. López-Villegas; A. Cornet; J.R. Morante; M. Renaud; P. Boher 📂 Article 📅 1991 🏛 Elsevier Science ⚖ 63 KB

Influence of the surface treatments by m

✍ J.M. López-Villegas; A. Cornet; J.R. Morante; M. Renaud; P. Boher 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 355 KB