First stages of silicidation in Ti/Si thin films

✍ Scribed by B Chenevier; O Chaix-Pluchery; P Gergaud; O Thomas; R Madar; F La Via

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 186 KB
• Volume: 70
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(03)00421-0

✦ Synopsis

The structural evolution in fiber-textured Ti / Si thin films was investigated by in-situ X-ray diffraction in the temperature range preceding the formation of silicide compounds. Abnormal thermal behaviour of both 002 and 101 diffraction profiles was observed at 360 and 450 8C, which could be understood in terms of Si diffusion, first in Ti grain boundaries, then into the grains. By combining ex-situ strain studies with analysis of the Si local environment in the whole Ti silicide family from Ti Si to TiSi , it was possible to determine the stress-free lattice parameters of annealed films. They are significantly higher 5 3 2 than the bulk parameters, and indicate that nearly 4.5 at.% Si is present in the Ti grains.