Film properties of nitrogen-doped polycrystalline silicon for advanced gate material
β Scribed by Sang Ho Woo; Yil Wook Kim; Pyung Yong Um; Hae-Min Lee; Chang-Koo Kim
- Book ID
- 107514204
- Publisher
- Springer US
- Year
- 2009
- Tongue
- English
- Weight
- 809 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0256-1115
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## Abstract The influence of nitrogen on the internal structure and so on the electrical properties of silicon thin films obtained by lowβpressure chemical vapor deposition (LPCVD) was studied using several investigation methods. We found by using Raman spectroscopy and SEM observations that a stro
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