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Boron diffusion into nitrogen doped silicon films for P+ polysilicon gate structures

โœ Scribed by Farida Mansour; Ramdane Mahamdi; Laurent Jalabert; Pierre Temple-Boyer

Book ID
108388668
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
296 KB
Volume
434
Category
Article
ISSN
0040-6090

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Boron diffusion and activation in polysi
Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modeling
โœ R. Mahamdi; L. Saci; F. Mansour; P. Temple-Boyer; E. Scheid; L. Jalabert ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 329 KB

This work deals with in situ boron diffusion and activation in multilayer films: polysilicon (Poly1)/ amorphous silicon (Poly2). These films are deposited by LPCVD technique. However, several heat treatments were carried in order to determine the optimal annealing conditions to suppress boron penetr