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Field emission from hafnium oxynitride films prepared by ion beam-assisted deposition

โœ Scribed by Yongjin Wang; Jihua Zhang; Fumin Zhang; Feng Zhang; Shichang Zou


Book ID
103816247
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
154 KB
Volume
242
Category
Article
ISSN
0169-4332

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Indium tin oxide thin films prepared by
โœ Meng, Lijian ;Gao, Jinsong ;Teixeira, V. ;dos Santos, M. P. ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 664 KB

## Abstract Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80โ€“120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion