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Field-effect transistors based on intrinsic molecular semiconductors

✍ Scribed by Gérard Guillaud; Manaa Al Sadoun; Monique Maitrot; Jacques Simon; Marcel Bouvet

Book ID
107734812
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
335 KB
Volume
167
Category
Article
ISSN
0009-2614

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The electrical characteristics of an insulated gate field effect transistor (FET) based on an intrinsic molecular semiconductor, bis(phthalocyaninato)lutetium (Pc\*Lu), are described. All the usual parameters of conventional devices are determined; the threshold voltage ( -2 V), the transconductance