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Field effect studies of the oxidized silicon surface

✍ Scribed by J. Lindmayer

Publisher: Elsevier Science
Year: 1966
Tongue: English
Weight: 964 KB
Volume: 9
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(66)90107-9

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## Abstract Micro‐Raman studies were performed on ion‐irradiated oxidized silicon surfaces with different ion energies, ion fluences and subsequent hydrogenation to determine the efficacy and sensitivity for obtaining information on the degree of ion beam‐induced damage in very thin (__ca.__ 100 Å)