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Grafting of oxidized silicon nitride insulator for the preparation of ion-sensitive field effect transistor monolayer membranes

✍ Scribed by H. Perrot; N. Jaffrezic-Renault; A. Gagnaire; J.L. Duvault; G. Hollinger; N.F. de Rooij; G. Racine; S. Jeanneret; A. Maaref


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
460 KB
Volume
214
Category
Article
ISSN
0040-6090

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