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Ferroelectric self-field effect: Implications for size effect and memory device

✍ Scribed by Watanabe, Yukio; Masuda, Akihiro

Book ID
127258748
Publisher
Taylor and Francis Group
Year
1999
Tongue
English
Weight
538 KB
Volume
27
Category
Article
ISSN
1058-4587

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## Abstract The non‐volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configu