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Ferroelectric, dielectric and piezoelectric properties of Pb1−xCex(Zr0.60Ti0.40)O3, 0

✍ Scribed by Benudhar Sahoo; Prasanta Kumar Panda


Publisher
Springer
Year
2007
Tongue
English
Weight
426 KB
Volume
42
Category
Article
ISSN
0022-2461

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The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct