Fermi level dependent properties of hydrogen in crystalline silicon
✍ Scribed by W. Csaszar; A.L. Endrös
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 328 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0921-5107
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📜 SIMILAR VOLUMES
Thc thermal transformation ol deuterium it] p-type crvslallinc silicon is sludicd wilt] a '~aricty ol experimental techniques. It is found lhal D-atolns initially mippcd at acceptor sites can hc transferred b~ low temperature annealing to a different state lcnlati~,c]\ ascribed to intcrstilia[ l). m
Hydrogen is commonly introduced into silicon solar cells to reduce the deleterious effects of defects and to increase cell efficiency. A process that is widely used by industry to introduce hydrogen is by the post-deposition annealing of a hydrogen-rich SiN x layer that is used as an anti-reflection