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Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

✍ Scribed by L. M. Sorokin; N. S. Savkina; V. B. Shuman; A. A. Lebedev; G. N. Mosina; G. Hutchison

No coin nor oath required. For personal study only.

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