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Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC

✍ Scribed by M. G. Mynbaeva; A. A. Lavrent’ev; N. I. Kuznetsov; A. N. Kuznetsov; K. D. Mynbaev; A. A. Lebedev

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Features of the structure of a porous si

✍ L. M. Sorokin; N. S. Savkina; V. B. Shuman; A. A. Lebedev; G. N. Mosina; G. Hutc 📂 Article 📅 2002 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 250 KB