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Features of the structural, electrokinetic, and magnetic properties of the heavily doped ZrNiSn semiconductor: Dy acceptor impurity

✍ Scribed by V. A. Romaka; D. Fruchart; V. V. Romaka; E. K. Hlil; Yu. V. Stadnyk; Yu. K. Gorelenko; L. G. Akselrud

No coin nor oath required. For personal study only.

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