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The mechanism of generation of the donor- and acceptor-type defects in then-TiNiSn semiconductor heavily doped with Co impurity

✍ Scribed by V. A. Romaka; Yu. V. Stadnyk; D. Fruchart; T. I. Dominuk; L. P. Romaka; P. Rogl; A. M. Goryn


Book ID
111444420
Publisher
Springer
Year
2009
Tongue
English
Weight
237 KB
Volume
43
Category
Article
ISSN
1063-7826

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