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Fault simulation for general FCMOS ICs

✍ Scribed by M. Favalli; P. Olivo; B. Riccò; F. Somenzi

Publisher
Springer US
Year
1991
Tongue
English
Weight
658 KB
Volume
2
Category
Article
ISSN
0923-8174

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✦ Synopsis

This work presents a technique to correctly deal with non-stuck-at faults in FCMOS circuits making use of complex macrogates. This method can be applied to any gate-level fault simulator providing, for each line of the circuit, the observability status that is directly related to that of individual devices in the actual macrogate implementation. Conductance conflicts are correctly solved to detect bridgings and transistors stuck-on. Fault coverage results are presented and discussed for two typical FCMOS circuits. Results obtained on all ISCAS benchmarks show that the time required for the fault simulation of CMOS faults is comparable to that of stuck-ats.

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