This work presents a technique to correctly deal with non-stuck-at faults in FCMOS circuits making use of complex macrogates. This method can be applied to any gate-level fault simulator providing, for each line of the circuit, the observability status that is directly related to that of individual
Generic simulator for faulty IC
β Scribed by Ferrigno, Julie; Machouat, Aziz; Perdu, Philippe; Lewis, Dean; Haller, Gerald; Goubier, Vincent
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 900 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0026-2714
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β¦ Synopsis
Soft defect impact on electrical characteristics is becoming a key issue for device analysis after reliability test as well as for products coming back from the field. Simulating the effect of defects plays a key role. Unfortunately, the complexity of the devices induces a long simulation time, while technology information is not always available at end user side, especially regarding very deep submicron CMOS technology. Having a fast and efficient generic simulator is of great interest for reliability test. In this paper, by comparing the design kit model from ST Microelectronics to the BSIM4 compact model on Microwind3.0, we will show the possibility to run fast simulations with a generic simulation tool. The final application of this generic simulator is to obtain the dynamic behavior in light emission on the failed structures.
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