Fast semiconductor thermoelectric devices
β Scribed by U. Birkholz; R. Fettig; J. Rosenzweig
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 360 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0250-6874
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A new technology for controlling reduction of minority carrier lifetime of power semiconductor devices was given in this paper, using fast neutron irradiation in nuclear reactor. The effects of high frequency thyristor by fast neutron irradiation is mainly discussed. Furthermore, a comparison is ma
## Abstract In this work, we present research on semimetalβsemiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different IIIβV semiconductors embedded with semimetallic rare earthβgroup V (REβV) compounds, but focus is given here to E