## Abstract Review: 41 refs.
Semimetal/Semiconductor Nanocomposites for Thermoelectrics
✍ Scribed by Hong Lu; Peter G. Burke; Arthur C. Gossard; Gehong Zeng; Ashok T. Ramu; Je-Hyeong Bahk; John E. Bowers
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 550 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0935-9648
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
In this work, we present research on semimetal‐semiconductor nanocomposites grown by molecular beam epitaxy (MBE) for thermoelectric applications. We study several different III‐V semiconductors embedded with semimetallic rare earth‐group V (RE‐V) compounds, but focus is given here to ErSb:In~x~Ga~1‐x~Sb as a promising p‐type thermoelectric material. Nanostructures of RE‐V compounds are formed and embedded within the III‐V semiconductor matrix. By codoping the nanocomposites with the appropriate dopants, both n‐type and p‐type materials have been made for thermoelectric applications. The thermoelectric properties have been engineered for enhanced thermoelectric device performance. Segmented thermoelectric power generator modules using 50 μm thick Er‐containing nanocomposites have been fabricated and measured. Research on different rare earth elements for thermoelectrics is discussed.
📜 SIMILAR VOLUMES
We report here electronic properties of a two-dimensional modulated superlattice nanostructure. Our sample, grown by MBE, had a period d =d 1 + d 2 (90 layers) of d 1 =5.6 nm (HgTe)/d 2 = 3 nm (CdTe). Calculations of the specters of energy E(d 2 ), E(k z ) and E(k p ), respectively, in the direction