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Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100)

✍ Scribed by Morley, S.; Zahn, D. R. T.; Eickhoff, T.; Richter, W.; Woolf, D. A.; Westwood, D. I.; Williams, R. H.

No coin nor oath required. For personal study only.

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